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MWI 15-12A6K
IGBTs
Ratings
Symbol
V CES
V GES
V GEM
I C25
I C80
P tot
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
Conditions
continuous
transient
T VJ = 25°C to 50°C
T C = 25°C
T C = 80°C
T C = 25°C
min.
typ.
max.
200
±20
±30
9
3
90
Unit
V
V
V
A
A
W
V CE(sat)
V GE(th)
I CES
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
I C = 5 A; V GE = 5 V
I C = 0.35 mA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
4.5
3.0
3.5
0.8
3.4
6.5
0.9
V
V
V
mA
mA
I GES
C ies
Q G(on)
gate emitter leakage current
input capacitance
total gate charge
V CE = 0 V; V GE = ±20 V
V CE = 25 V; V GE = 0 V; f = MHz
V CE = 600 V; V GE = 5 V; I C = 0 A
600
45
00
nA
pF
nC
t d(on)
t r
t d(off)
t f
E on
E off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V CE = 600 V; I C = 0 A
V GE = ± 5 V; R G = 82 W
T VJ = 25°C
50
40
290
60
.2
.
ns
ns
ns
ns
mJ
mJ
I CM
reverse bias safe operating area
RBSOA; V GE = ± 5 V; R G = 82 W
L = 00 μH; clamped induct. load T VJ = 25°C
V CEmax = V CES - L S · di/dt
30
A
t SC
(SCSOA)
R thJC
R thCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
V CE = 200 V; V GE = ± 5 V;
R G = 82 W ; non-repetitive
(per IGBT)
(per IGBT)
T VJ = 25°C
0
0.5
.37
μs
K/W
K/W
Diodes
Ratings
Symbol
V RRM
I F25
I F80
V F
I RM
t rr
E rec(off)
Definitions
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
reverse recovery energy
Conditions
I F = 5 A; V GE = 0 V
V R = 600 V
di F /dt = -400 A/μs
I F = 5 A; V GE = 0 V
T VJ = 50°C
T C = 25°C
T C = 80°C
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
min.
typ.
2.4
.7
6
30
tbd
max.
200
24
6
2.7
Unit
V
A
A
V
V
A
ns
μJ
R thJC
R thCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
(per diode)
0.55
.6
K/W
K/W
T C = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
2007 3a
2-4
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